Micro Defect Size in Si Single Crystal Grown by Czochralski Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. The mechanism of swirl defects formation in silicon
2. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
3. Defect engineering of Czochralski single-crystal silicon
4. The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon
5. Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface acoustic wave diagnosis of vacancy orbital with electric quadrupoles in silicon;Journal of Physics: Conference Series;2015-03-18
2. Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II;ECS Solid State Letters;2014-07-22
3. Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer;Acta Physica Polonica A;2014-04
4. Strong Quadrupole-Strain Interaction of Vacancy Orbital in Boron-Doped Czochralski Silicon;Journal of the Physical Society of Japan;2013-12-15
5. Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals;ECS Journal of Solid State Science and Technology;2012-12-28
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