Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference6 articles.
1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
2. Effect of Device Parameters on the Breakdown Voltage of Impact-Ionization Metal–Oxide–Semiconductor Devices
3. Novel Tunneling Devices with Multi-Functionality
4. Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors
5. Tunnel field-effect transistor without gate-drain overlap
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