Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference26 articles.
1. Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
2. Low substrate temperature deposition of crystalline SiC using HWCVD
3. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
4. Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
5. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells
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1. A ternary–3D analysis of the optical properties of amorphous hydrogenated silicon–rich carbide;Materials Chemistry and Physics;2019-01
2. Dual hot-wire arrangement for the deposition of silicon and silicon carbide thin films;Thin Solid Films;2015-01
3. Impact of doped microcrystalline silicon oxide layers on crystalline silicon surface passivation;Canadian Journal of Physics;2014-07
4. Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells;Japanese Journal of Applied Physics;2014-01-01
5. Reactive Bond-Order Potential for Si-, C-, and H-Containing Materials;The Journal of Physical Chemistry C;2013-01-10
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