Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be-Reference-Cited by-同舟云学术

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Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be

Published:2003-10-09 Issue:Part 1, No. 10 Volume:42 Page:6256-6259
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yuldashev Shavkat U.,Im Hyunsik,Yalishev Vadim Sh.,Park Chang Soo,Kang Tae Won,Lee Sanghoon,Sasaki Yuji,Liu Xin,Furdyna Jacek K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=10R/a=6256/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistivity and p–d Exchange Interaction in Cr0.2Sb(1.8-x)BixTe3;Applied Physics Express;2013-05-01

2. Electronic Structure of Mn in III-Mn-V Ferromagnetic Semiconductors;Handbook of Spintronic Semiconductors;2010-05-31

3. Comparison of annealing effects on Zn-doped GaMnAs and undoped GaMnAs epilayers;Applied Surface Science;2008-08

4. Chapter 3 Fermi Level Effects on Mn Incorporation in III‐Mn‐V Ferromagnetic Semiconductors;Semiconductors and Semimetals;2008

5. Effects of high-temperature annealing on magnetic properties of (Zn0.91Mn0.09)O thin films grown by RF magnetron sputtering;Materials Science and Engineering: B;2006-01

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