Interfacial Reactions of Ni, Si/Ni and Ni/Si Films on (100)GaAs-Reference-Cited by-同舟云学术

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Interfacial Reactions of Ni, Si/Ni and Ni/Si Films on (100)GaAs

Published:1990-02-20 Issue:Part 1, No. 2 Volume:29 Page:381-385
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwakuro Hiroaki,Kuroda Tsukasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials;ECS Journal of Solid State Science and Technology;2013

2. Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07

3. Interactions of thin films of Pd and Pd/Si on GaAs: an X-ray photoelectron spectroscopic study combined with a thermodynamic analysis;Journal of Materials Science;1998

4. Interfacial Reactions of Pd and Pd/Si on GaAs;physica status solidi (a);1997-12

5. Thermally stable non‐gold Ohmic contacts ton‐type GaAs. II. NiSiW contact metal;Journal of Applied Physics;1992-11

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