Negative Bias Temperature Instability on Plasma-Nitrided Silicon Dioxide Film-Reference-Cited by-同舟云学术

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Negative Bias Temperature Instability on Plasma-Nitrided Silicon Dioxide Film

Published:2002-03-15 Issue:Part 2, No. 3B Volume:41 Page:L314-L316
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ang Chew-Hoe,Lek Chun-Meng,Tan Shyue-Seng,Cho Byung-Jin,Chen Tupei,Lin Wenhe,Zhen Jia-Zheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3B/a=L314/pdf

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1. Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems;Japanese Journal of Applied Physics;2021-12-15

2. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

3. Origin of Initial Rapid Cell Current Reduction in Non-Volatile One-Time Programming Memory;IEEE Electron Device Letters;2016-02

4. The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation;Journal of Applied Physics;2008-09-15

5. Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics;Journal of Applied Physics;2008-04-15

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