The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
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Published:1999-01-15
Issue:Part 2, No. 1A/B
Volume:38
Page:L33-L34
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Wang Meng-Fan,Chien Chao-Hsin,Chao Tien-Sheng,Lin Horng-Chih,Jong Fuh-Cheng,Huang Tiao-Yuan,Chang Chun-Yen
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering