Delta-Doping of Si in GaN by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Delta-Doping of Si in GaN by Metalorganic Chemical Vapor Deposition

Published:1999-02-15 Issue:Part 1, No. 2A Volume:38 Page:681-682
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jong-Hee,Yang Gye Mo,Choi Sung Chul,Choi Ji Youn,Cho Hyun Kyung,Lim Kee Young,Lee Hyung Jae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching;Nanoscale;2020

2. Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers;Journal of Crystal Growth;2014-02

3. Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers;Applied Physics Letters;2012-05-21

4. Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates;Applied Physics Express;2012-02-10

5. Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?;physica status solidi (c);2003-11-24

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