Design Rules for High-Brightness Light-Emitting Diodes Grown on GaAs Substrate-Reference-Cited by-同舟云学术

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Design Rules for High-Brightness Light-Emitting Diodes Grown on GaAs Substrate

Published:1998-02-15 Issue:Part 1, No. 2 Volume:37 Page:509-516
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Song Jae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The optimum condition of GaxIn1-xP/GaAs1-yPy strain compensation for excessive strained In0.15GaAs MQWs in 1000 nm infrared light-emitting diode;Infrared Physics & Technology;2018-09

2. Study on Strain Compensation for Multiple-Quantum Well in Infrared Light-Emitting Diode Using the InxGa1−xP Strain Barrier;Journal of Nanoscience and Nanotechnology;2018-03-01

3. Enhanced output power of InGaAs/GaAs infrared light-emitting diode with Ga x In 1-x P tensile strain barrier;Current Applied Physics;2017-12

4. TOF SIMS analysis, structure and photoluminescence properties of pulsed laser deposited CaS:Eu2+ thin films;Journal of Luminescence;2015-11

5. Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator;Electrochemical and Solid-State Letters;2010

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