Preparation and Electrical Properties of Sol–Gel Derived Zr-rich Pb(Zr,Ti)O3Thin Films-Reference-Cited by-同舟云学术

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Preparation and Electrical Properties of Sol–Gel Derived Zr-rich Pb(Zr,Ti)O3Thin Films

Published:1998-09-15 Issue:Part 1, No. 9A Volume:37 Page:4910-4913
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Wensheng,Karaki Tomoaki,Adachi Masatoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions;Journal of Applied Physics;2019-08-21

2. Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOxbottom electrode for the La-doped Pb(Zr,Ti)O3ferroelectric capacitor;Japanese Journal of Applied Physics;2018-08-31

3. Control of La-doped Pb(Zr,Ti)O3crystalline orientation and its influence on the properties of ferroelectric random access memory;Japanese Journal of Applied Physics;2017-09-25

4. Structural and Dielectric Properties of Sol-gel Derived BiFeO3/Pb(Zr,T)O3Heterolayered Thin Films;Transactions on Electrical and Electronic Materials;2010-10-31

5. B site doping effect on depinning in Pb(Mn1/3Nb1/3Sb1/3)x(Zr0.825Ti0.175)1–xO3 ferroelectric ceramics;Applied Physics Letters;2008-11-10

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