Etch Profile Control of W/TiN/HfSiON and W/TaSiN/HfSiON Full-Metal Gates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference8 articles.
1. On the interest of carbon-coated plasma reactor for advanced gate stack etching processes
2. Profile control of novel non-Si gates using BCl[sub 3]∕N[sub 2] plasma
3. Tungsten metal gate etching in Cl2∕O2 inductively coupled high density plasmas
4. Tungsten Gate Technology for Quarter-Micron Application
5. Real-Time Measurement of W, TiN, and TaSiN Thicknesses Comprising Full-Metal Gates during Plasma Etching by Optical Interference of Etching Plasma
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors;Applied Physics Express;2015-04-01
2. Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels;Japanese Journal of Applied Physics;2014-01-01
3. Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function;Applied Physics Letters;2013-04-22
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