Extraction of Interface-States Energy Distribution in Nitrided and Pure Gate Dielectrics for Metal Oxide Semiconductor Field Effect Transistor Applications-Reference-Cited by-同舟云学术

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Extraction of Interface-States Energy Distribution in Nitrided and Pure Gate Dielectrics for Metal Oxide Semiconductor Field Effect Transistor Applications

Published:2009-05-20 Issue:5 Volume:48 Page:054502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Son Younghwan,Yang Seungwon,Kim Bong Chan,Kim Jinho,Moon Chang-Rok,Lee Duckhyung,Lee Jong-Duk,Park Byung-Gook,Shin Hyungcheol

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

2. Observation of single interface traps in submicron MOSFET's by charge pumping

3. A reliable approach to charge-pumping measurements in MOS transistors

4. Fast and slow border traps in MOS devices

5. High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide;IEEE Transactions on Electron Devices;2011-08

2. Investigation of Output Signal from Cavitation Sensor by Dissolved Oxygen Level and Sonochemical Luminescence;Japanese Journal of Applied Physics;2010-07-20

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