Influence of Electrostatic Charge on Recombination Lifetime and Native Oxide Growth on HF-Treated Silicon Wafers-Reference-Cited by-同舟云学术

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Influence of Electrostatic Charge on Recombination Lifetime and Native Oxide Growth on HF-Treated Silicon Wafers

Published:2009-01-20 Issue:1 Volume:48 Page:011201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Araki Nobue

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Native Silicon Oxide Properties Determined by Doping;Langmuir;2023-08-23

2. Effects of dopant type and concentration on surface recombination velocity in hydrogen-terminated silicon;Japanese Journal of Applied Physics;2022-08-19

3. Effect of Hydrogen for Preservation of Reconstructed Surfaces;Solid State Phenomena;2013-10

4. Chemical and electrical passivation of Si(111) surfaces;Applied Surface Science;2012-01

5. Variation in Si(100) surface roughness caused by H-termination during high-temperature Ar annealing;Journal of Crystal Growth;2011-03

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