Diffusion of Indium Implanted in Silicon Oxides
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Diffusion of indium in silicon inert and oxidizing ambients
2. Diffusion parameters of indium for silicon process modeling
3. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation
4. Weak magnetic field pattern detection by CMOS magnetic latch
5. Diffusion of 18 elements implanted into thermally grown SiO[sub 2]
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