Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures-Reference-Cited by-同舟云学术

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Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures

Published:1995-02-01 Issue:Part 2, No. 2A Volume:34 Page:L159-L162
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Osborne Ian S.,Hata Nobuhiro,Matsuda Akihisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light-induced, reversible, above-gap, optical changes in hydrogenated amorphous silicon films;Journal of Non-Crystalline Solids;2000-05

2. Growth of hydrogenated amorphous silicon and its alloys;Current Opinion in Solid State and Materials Science;1997-08

3. Photo and Thermal Stability of Chlorine Doped Amorphous Silicon TFTs;MRS Proceedings;1997

4. Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from ‘new’ deposition techniques;Journal of Non-Crystalline Solids;1996-05

5. Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge;Journal of Non-Crystalline Solids;1996-05

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