Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2011-08-22 Issue:8 Volume:50 Page:08KD05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kamei Masayuki,Takao Yoshinori,Eriguchi Koji,Ono Kouichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

2. Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

5. Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-kand SiO2Gate Dielectrics

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