Phenomenological Model for Stress and Relaxation Processes of Resistance Drift in Magnetic Tunnel Junctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Demonstrated Reliability of 4-Mb MRAM
2. Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching
3. Time Evolution of Resistance Drift of Magnetic Tunnel Junctions with Ultrathin AlOx Films
4. Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions
5. Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic electrodes: Nanoconstrictions, local heating, and direct and wind forces
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