Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition

Published:1990-01-20 Issue:Part 2, No. 1 Volume:29 Page:L185-L187
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saito Kunio,Amazawa Takao,Arita Yoshinobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of Gas-Phase Cleaning for Removal of Surface Contaminants;Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques;2019

2. Gas-Phase Cleaning for Removal of Surface Contaminants;Developments in Surface Contamination and Cleaning, Volume 9;2017

3. Preparation and properties of TiSi2 thin films from TiCl4/H2 by plasma enhanced chemical vapor deposition;Journal of Crystal Growth;2002-01

4. Selective Titanium Silicide Deposition Using SiH4 ‐ TiCl4 ‐ H 2 in Low‐Pressure Chemical Vapor Deposition and Film Characterization;Journal of The Electrochemical Society;1998-11-01

5. Effect of Fluorine on Surface Morphology in Selective Epitaxial TiSi2 Growth by Plasma‐Enhanced Chemical Vapor Deposition;Journal of The Electrochemical Society;1998-05-01

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