Electrical Characteristics and the X-ray Photoelectron Spectroscopy of AlN/InP Structure Fabricated by Helicon-Wave-Excited Plasma Nitridation of Vacuum-Evaporated Al
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering;Japanese Journal of Applied Physics;2005-01-11
2. Antimony and bismuth passivations of InP and characterizations of InP metal-insulator-semiconductor structures fabricated by plasma oxidation of Sb- and Bi-passivated InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-01
3. Characterization of damage in InP dry etched using nitrogen containing chemistries;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
5. Improved Electrical Characteristics of Al 2O 3/InP Structure by Combination of Sulfur Passivation and Forming Gas Annealing;Japanese Journal of Applied Physics;1999-12-15
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