X-Ray Rocking Curve Study of the Strain Profile Formed by MeV Ion Implantation into (111) Silicon Wafers-Reference-Cited by-同舟云学术

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X-Ray Rocking Curve Study of the Strain Profile Formed by MeV Ion Implantation into (111) Silicon Wafers

Published:1997-12-15 Issue:Part 1, No. 12A Volume:36 Page:7296-7301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuribayashi Masaru,Takumi Katsuhiko,Inoue Akira,Tanaka Hiroyuki,Tomita Hirofumi,Jiang Yi-Chao,Katoh Hiroyuki,Ishida Kohtaro,Aizawa Kazuya,Okayasu Satoru,Tomimitsu Hiroshi,Kazumata Yukio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction;Journal of Physics: Condensed Matter;2010-11-15

2. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction;Journal of Applied Physics;2009-08-15

3. Strain distribution due to ion implantation revealed by extremely asymmetric x-ray diffraction;e-Journal of Surface Science and Nanotechnology;2006

4. Photoacoustic and X-ray Studies on H Ion Implanted n-GaAs;Crystal Research and Technology;2002-11

5. X-ray pulse compression using strained crystals;Optics Communications;2002-05

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