Rapid and Uniform SiO2Film Growth on 4 inch Si Wafer Using 100%-O3Gas-Reference-Cited by-同舟云学术

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Rapid and Uniform SiO2Film Growth on 4 inch Si Wafer Using 100%-O3Gas

Published:2005-01-11 Issue:1A Volume:44 Page:118-124
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nishiguchi Tetsuya,Sato Yosuke,Nonaka Hidehiko,Ichimura Shingo,Noyori Takeshi,Morikawa Yoshiki,Kekura Mitsuru,Nihei Yoshimasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of ALD Process with Pure Ozone Gas;Journal of The Surface Finishing Society of Japan;2023-03-01

2. Ozone based high-temperature atomic layer deposition of SiO2thin films;Japanese Journal of Applied Physics;2020-03-06

3. Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels;ECS Transactions;2019-12-18

4. Reformation of CVD-SiO2 Films by UV Irradiation in Highly Concentrated Ozone;Journal of the Vacuum Society of Japan;2009

5. Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C;Japanese Journal of Applied Physics;2007-05-08

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