Selective Dry Etching of HfO2in CF4and Cl2/HBr-Based Chemistries-Reference-Cited by-同舟云学术

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Selective Dry Etching of HfO2in CF4and Cl2/HBr-Based Chemistries

Published:2004-04-27 Issue:4B Volume:43 Page:1864-1868
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maeda Takeshi,Ito Hiroyuki,Mitsuhashi Riichiro,Horiuchi Atsushi,Kawahara Takaaki,Muto Akiyoshi,Sasaki Takaoki,Torii Kazuyoshi,Kitajima Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single Sideband Suppressed Carrier Modulation With Spatiotemporal Metasurfaces at Near-Infrared Spectral Regime;Journal of Lightwave Technology;2022-06-15

2. Electron collision cross section set of Cl2 gas and electron transport analysis in Cl2 gas and Cl2/N2 mixtures;Japanese Journal of Applied Physics;2020-03-06

3. Conclusions;Nano-Cmos Gate Dielectric Engineering;2017-12-19

4. Nanostructuring of Ultra-Thin HfO₂ Layers for High-k/III–V Device Application;Journal of Nanoscience and Nanotechnology;2011-10-01

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