An Improved Electron Scattering Simulation at the Mask in a Projection Lithography System

Author:

Kotera Masatoshi,Ishida Yoshihisa,Naruse Kentarou,Shimizu Isao,Tomo Youichi,Yoshida Akira,Kojima Yoshinori,Yamabe Masaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Monte Carlo Simulation of Projection Electron Beam Lithography;Solid State Phenomena;2007-03

2. Precision Analysis of Electron Beam Lithography;IEEJ Transactions on Electronics, Information and Systems;2006

3. Monte Carlo simulation of electron transmission through the scattering masks with angular limitation for projection electron lithography;Journal of Applied Physics;2002-10

4. Influence of the scattered electrons at the mask in a projection lithography system;Microelectronic Engineering;2001-09

5. Mask charging phenomena during electron beam exposure in the EPL system;Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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