Fabrication of Low-Stress Plasma Enhanced Chemical Vapor Deposition Silicon Carbide Films-Reference-Cited by-同舟云学术

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Fabrication of Low-Stress Plasma Enhanced Chemical Vapor Deposition Silicon Carbide Films

Published:2000-12-15 Issue:Part 1, No. 12A Volume:39 Page:6663-6671
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Tzu-Yin,Duh Jenq-Gong,Chung Chen-Kuei,Niu Huan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the annealing effect in optical properties for phosphorus-doped a-Si _x C₁₋ _x :H films deposited by PECVD;Journal of Physics D: Applied Physics;2023-07-06

2. Method of refractive index, roughness and uniformity of silicon carbide layer deposited by plasma enhanced chemical vapour deposition method;ICPS 2013: International Conference on Photonics Solutions;2013-06-07

3. The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions;Journal of the Korean Ceramic Society;2010-05-31

4. ? The Study of dielectric constant change of a-SiC:H films deposited by remote PECVD with low deposition temperatures;Journal of the Korean Physical Society;2009-11-14

5. Characterization of SiC:H films deposited using HMDS precursor with C2H2 dilution gas by remote PECVD system;Journal of the Ceramic Society of Japan;2009

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