Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth-Reference-Cited by-同舟云学术

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Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Published:2000-12-15 Issue:Part 1, No. 12A Volume:39 Page:6496-6500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kamata Isaho,Tsuchida Hidekazu,Jikimoto Tamotsu,Izumi Kunikazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

3. Non-destructive detection of sub-micrometer-sized micropipes in silicon carbide using mirror electron microscope;Journal of Applied Physics;2023-11-15

4. Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage;Crystal Growth & Design;2023-06-05

5. Dislocations in 4H silicon carbide;Journal of Physics D: Applied Physics;2022-09-23

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