Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si (100) Substrates-Reference-Cited by-同舟云学术

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Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si (100) Substrates

Published:2000-07-30 Issue:Part 1, No. 7B Volume:39 Page:4483-4485
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uragami Takeshi,Fujioka Hiroshi,Waki Ichitaro,Mano Takaaki,Ono Kanta,Oshima Masaharu,Takagi Yasuo,Kimura Masao,Suzuki Tamaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium Arsenide Islands on Silicon;Dekker Encyclopedia of Nanoscience and Nanotechnology, Third Edition;2014-06-10

2. Structural characterization of group III nitrides grown by pulsed laser deposition;Thin Solid Films;2004-06

3. Structural properties of GaN grown on LiGaO2 by PLD;Journal of Crystal Growth;2003-11

4. Generalized grazing-incidence-angle x-ray scattering analysis of quantum dots;Journal of Applied Physics;2003-02-15

5. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates;Journal of Physics: Condensed Matter;2002-11-22

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