Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Published:2000-08-15 Issue:Part 1, No. 8 Volume:39 Page:4749-4750
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chung Sung Hoon,Lachab Mohamed,Wang Tao,Lacroix Yves,Basak Durga,Fareed Qhalid,Kawakami Yoshihisa,Nishino Katsushi,Sakai Shiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED;Materials Science in Semiconductor Processing;2020-02

3. Correlation of Structural, Morphological, Electrical and Mechanical Properties of TiN Thin Film at Different Substrate Bias;Science of Advanced Materials;2017-02-01

4. Influence of O2 pressure on the properties of heavily-doped ZnO:Sb thin films grown by pulsed laser deposition;Journal of Materials Science: Materials in Electronics;2012-12-16

5. Influence of nitrogen gas flow rate on the structural, morphological and electrical properties of sputtered TiN films;Journal of Materials Science: Materials in Electronics;2012-09-15

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