Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching-Reference-Cited by-同舟云学术

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Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching

Published:1987-04-20 Issue:Part 2, No. 4 Volume:26 Page:L270-L272
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tokuda Jun,Takai Mikio,Gamo Kenji,Namba Susumu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal growth of La2−xSrxCuO4−δ by the travelling-solvent floating-zone method;Journal of Crystal Growth;1994-04

2. Laser‐projection‐patterned etching of GaAs in a chlorine atmosphere;Journal of Applied Physics;1992-03-15

3. Recent developments in high-Tc single crystal growth in Japan: Bulk and thin film;Progress in Crystal Growth and Characterization of Materials;1992-01

4. Laser-Driven Etching;Thin Film Processes;1991

5. Laser-induced trench etching of GaAs in aqueous KOH solution;Applied Physics A Solids and Surfaces;1990-10

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