Fabrication of Nonpolar $a$-Plane Nitride-Based Solar Cell on $r$-Plane Sapphire Substrate-Reference-Cited by-同舟云学术

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Fabrication of Nonpolar $a$-Plane Nitride-Based Solar Cell on $r$-Plane Sapphire Substrate

Published:2011-10-05 Issue:10 Volume:4 Page:101001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Nakao Tatsuro,Fujii Takahiro,Sugiyama Toru,Yamamoto Shota,Iida Daisuke,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=10/a=101001/pdf

Reference10 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

4. GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

5. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells;Nanoscale Research Letters;2020-08-20

2. Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer;Applied Sciences;2019-02-23

3. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency;Applied Physics Letters;2017-04-17

4. Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum;Japanese Journal of Applied Physics;2016-04-01

5. Effect of thermal annealing in a-InxGa1–xN films prepared by reactive RF-sputtering;Canadian Journal of Physics;2014-07

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