Author:
Pons Michel,Joubert Olivier,Martinet Christine,Pelletier Jacques,Panabière Jean-Pierre,Weill André
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
18 articles.
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1. Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma added with SO2 or OCS for high-aspect-ratio etching;Applied Surface Science;2024-02
2. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
3. Photolithography;Materials Science and Technology;2013-02-15
4. Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-07
5. Pattern Generation;Copper Interconnect Technology;2009