Optical Properties of High-QualityGa1-xInxAs1-ySby/InAsGrown by Liquid-Phase Epitaxy-Reference-Cited by-同舟云学术

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Optical Properties of High-QualityGa1-xInxAs1-ySby/InAsGrown by Liquid-Phase Epitaxy

Published:1994-04-15 Issue:Part 1, No. 4A Volume:33 Page:1740-1746
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gong Xiuying,Kan Hirofumi,Yamaguchi Tomuo,Suzuki Isao,Aoyama Mitsuru,Kumagawa Masashi,Rowell Nelson L.,Wang Aiguo,Rinfret Robert

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure;Physics of the Solid State;2020-11

2. The spin–orbit splitting band in InGaAsSb alloys lattice-matched to InAs;Journal of Physics D: Applied Physics;2014-06-24

3. Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution;Applied Physics Letters;2012-05-21

4. GaxIn1–xAsySb1–y: energy gaps;New Data and Updates for III-V, II-VI and I-VII Compounds;2010

5. Raman spectroscopic determination of electron concentration in n-type GaInAsSb;Journal of Applied Physics;2009-12-15

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