ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions

Author:

Itoh Satoshi,Nakayama Norikazu,Ohata Toyoharu,Ozawa Masafumi,Okuyama Hiroyuki,Nakano Kazushi,Ikeda Masao,Ishibashi Akira,Mori Yoshifumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Broadened waveguide laser structures at 780 nm;High-Power Diode Laser Technology XV;2017-02-22

2. Wide-bandgap semiconductor materials: For their full bloom;Japanese Journal of Applied Physics;2015-02-04

3. Effect of Induced Strain on Band Lineups in CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures;Japanese Journal of Applied Physics;2007-01-10

4. Photonic Devices;Wide Bandgap Semiconductors;2007

5. Effect of Induced Strain on Valence Band in CdxZn1-xS Wells of CdxZn1-xS/ZnS/BeyZn1-yS Separate-Confinement Heterostructures;Japanese Journal of Applied Physics;2006-07-07

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