Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy andIn-situContamination System-Reference-Cited by-同舟云学术

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Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy andIn-situContamination System

Published:2012-06-20 Issue: Volume:51 Page:06FB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Doh Jonggul,Lee Sangsul,Lee Jaewook,Hong Seongchul,Jeong Chang Young,Lee Dong Gun,Kim Seong-Sue,Ahn Jinho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-28

2. Contamination Removal From UV and EUV Photomasks;Developments in Surface Contamination and Cleaning, Volume 9;2017

3. Coherent scattering microscopy as an effective inspection tool for analyzing performance of phase shift mask;Optics Express;2016-05-25

4. Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

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