Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistors Based on Two-Port $S$-Parameter Measurement
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Published:2012-10-30
Issue:
Volume:51
Page:111201
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Kang In Man,Cho Seongjae,Shin Hyungcheol
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering