Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

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Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy

Published:1991-12-30 Issue:Part 1, No. 12B Volume:30 Page:3638-3641
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanimoto Masafumi,Douseki Takakuni,Takigami Takako

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale reliability assessment of electronic devices;Microelectronic Engineering;1999-11

2. High-resolution cross-sectional imaging of MOSFETs by scanning resistance microscopy;IEEE Electron Device Letters;1997-02

3. Cross-sectional imaging of semiconductor device structures by scanning resistance microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01

4. Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05

5. Delineation of semiconductor doping by scanning resistance microscopy;Applied Physics Letters;1994-01-17

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