Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations-Reference-Cited by-同舟云学术

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Terahertz Radiation Mechanism of Native n-Type InN with Different Carrier Concentrations

Published:2010-09-17 Issue:10 Volume:3 Page:102202
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hwang Jenn-Shyong,Tsai Jung-Tse,Lin Kuang-I,Lee Ming-Hsun,Tsai Chiang-Nan,Lin Hon-Way,Gwo Shangjr,Chen Meng-Chu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=10/a=102202/pdf

Reference15 articles.

1. Structure and electronic properties of InN and In-rich group III-nitride alloys

2. Recent advances in the MOVPE growth of indium nitride

3. Terahertz emission from silicon and magnesium doped indium nitride

4. Terahertz emission mechanism of magnesium doped indium nitride

5. Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy;Japanese Journal of Applied Physics;2015-02-13

2. THz emitters based on the photo-Dember effect;Journal of Physics D: Applied Physics;2014-08-28

3. Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates;Journal of Materials Research;2013-04-16

4. Photoreflectance Study of InN Films with In and N Polarities;Applied Physics Express;2011-11-07

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