High-Performance Radio Frequency Passive Devices on Plastic Substrates for Radio Frequency Integrated Circuit Application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference5 articles.
1. RF noise in 0.18-μm and 0.13-μm MOSFETs
2. Low RF noise and power loss for ion-implanted Si having an improved implantation process
3. Large Q-factor improvement for spiral inductors on silicon using proton implantation
4. Fabrication of very high resistivity Si with low loss and cross talk
5. Picosecond photoresponse of carriers in Si ion‐implanted Si
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Automatic full-wave EM simulation of RFIC passive devices from industrial layouts [Application Notes];IEEE Microwave Magazine;2008-12
2. Simulation and Fabrication of Embedded Capacitors in the Multilayer Printed Circuit Board;Japanese Journal of Applied Physics;2008-09-19
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