Investigation for Narrow Cell Threshold Voltage Distribution in NOR Flash Device
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference3 articles.
1. Introduction to flash memory
2. The effect of dimensional scaling on the erase characteristics of NOR flash memory
3. Improvement of the tunnel oxide quality by a low thermal budget dual oxidation for flash memories
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. STI Gap-Filling Performance Improvement by the Process Integration Optimization in the 4XNM ETOX NOR Flash;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
2. Improvement of Standby Current Failure by Device Optimization on 4XNM ETOX NOR-Flash Memory;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
3. Suppression of Threshold Voltage Fluctuation by Control of Channel Profile for NOR Flash Memory Scaling;Japanese Journal of Applied Physics;2010-11-22
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