Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors-Reference-Cited by-同舟云学术

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Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors

Published:2009-04-03 Issue: Volume:2 Page:041003
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kondow Masahiko,Uchiyama Masayuki,Morifuji Masato,Wu Shudong,Momose Hideki,Fukushima Shin-ichi,Fukuyama Atsuhiko,Ikari Tetsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=4/a=041003/pdf

Reference23 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

3. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

4. Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

5. Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells;Journal of Applied Physics;2015-02-28

2. Detection of miniband formation in strain-balanced InGaAs/GaAsP quantum well solar cells by using a piezoelectric photothermal spectroscopy;Journal of Applied Physics;2014-07-28

3. Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells;physica status solidi (a);2014-01-10

4. Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance;Japanese Journal of Applied Physics;2012-02-20

5. Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States: The Influence of Illuminance;Japanese Journal of Applied Physics;2012-02-01

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