Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire-Reference-Cited by-同舟云学术

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Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire

Published:2003-06-15 Issue:Part 2, No. 6B Volume:42 Page:L640-L642
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Changqing,Yang Jinwei,Wang Hongmei,Zhang Jianping,Adivarahan Vinod,Gaevski Mikhail,Kuokstis Edmundas,Gong Zheng,Su Ming,Khan Muhammad Asif

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=6B/a=L640/pdf

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

2. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer*;Chinese Physics Letters;2020-03-01

3. Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer;Superlattices and Microstructures;2019-06

4. Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate;Superlattices and Microstructures;2019-06

5. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate;CrystEngComm;2019

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