InSbTe Phase-Change Materials for High Performance Multi-Level Recording
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=2S/a=795/pdf
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High‐Stability and Low‐Noise Multilevel Switching in In 3 SbTe 2 Material for Phase Change Photonic Memory Applications;physica status solidi (RRL) – Rapid Research Letters;2020-09-17
2. Advances in nanowire PCM;Advances in Non-Volatile Memory and Storage Technology;2019
3. Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies;Journal of Applied Physics;2017-07-07
4. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds;The Journal of Chemical Physics;2016-05-28
5. The effect of carbon-doped In3Sb1Te2ternary alloys for multibit (MLC) phase-change memory;physica status solidi (RRL) - Rapid Research Letters;2014-01-08
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