Transport Study of GaAs/AlGaAs Heterostructure- andn-Type GaAs-Devices in the `Anti Hall Bar within a Hall Bar' Configuration
Author:
Affiliation:
1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D70569 Stuttgart, Germany
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.65.1751
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Size dependence- and induced transformations- of fractional quantum Hall effects under tilted magnetic fields;Scientific Reports;2022-11-10
3. Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system;Scientific Reports;2021-07-22
4. Microwave resonance in a high-quality GaAs/AlGaAs two-dimensional electron system in the low-density and low-mobility condition;Physical Review B;2019-10-04
5. Charge equilibration in integer and fractional quantum Hall edge channels in a generalized Hall-bar device;Physical Review B;2019-05-13
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