Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication-Reference-Cited by-同舟云学术

Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

Published:2010-05-28 Issue:6 Volume:3 Page:061401
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hayashi Shohei,Higashi Seiichiro,Murakami Hideki,Miyazaki Seiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=6/a=061401/pdf

Reference19 articles.

1. Recent Progress in Organic Electronics: Materials, Devices, and Processes

2. Stable ZnO thin film transistors by fast open air atomic layer deposition

3. Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I

4. Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical vapor deposition using SiF4/H2

5. Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system

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