Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide-Reference-Cited by-同舟云学术

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Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide

Published:2005-08-05 Issue:8 Volume:44 Page:5953-5958
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

See Kwang-Seng,Lau Wai-Shing,Lee Jae Gon,Toh Suey-Li,Liao Hong,Li Kun,Quek Elgin Kiok-Boone,Chan Lap-Hung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Dynamic Bias Stress in Short-Channel (L=1.5 µm) p-Type Polycrystalline Silicon Thin-Film Transistors;Japanese Journal of Applied Physics;2012-02-01

2. Effect of Dynamic Bias Stress in Short-Channel ($L=1.5$ $\mu$m) p-Type Polycrystalline Silicon Thin-Film Transistors;Japanese Journal of Applied Physics;2012-01-16

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