Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

Published:2005-12-09 Issue:No. 51 Volume:44 Page:L1556-L1559
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cruz-Hernandez Esteban,Pulzara-Mora Alvaro,Ramírez-Arenas Francisco-Javier,Rojas-Ramirez Juan-Salvador,Méndez-García Víctor-Hugo,López-López Máximo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth;Applied Physics Letters;2012-08-13

2. Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

3. As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A;Journal of Crystal Growth;2011-02

4. Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy;physica status solidi (c);2010-12-20

5. Optical transitions in AlGaAs/GaAs quantum wires on GaAs(631) substrates studied by photoreflectance spectroscopy;Physica E: Low-dimensional Systems and Nanostructures;2010-09

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