A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications-Reference-Cited by-同舟云学术

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A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications

Published:2010-02-05 Issue:2 Volume:49 Page:020215
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Jui-Chien,Lin Yueh-Chin,Tseng Yu-Ling,Chen Ke-Shian,Lu Po-Chin,Lin Mong-E,Chang Edward-Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Tantalum as a diffusion barrier between copper and silicon

2. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

3. Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier

4. Thermal stability of Cu/Ta/GaAs multilayers

5. Backside copper metallisation of GaAs MESFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al_0.2Ga_0.3In_0.5P/Al_0.1Ga_0.4In_0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor;Science of Advanced Materials;2016-02-01

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