Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers-Reference-Cited by-同舟云学术

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Influence of Rapid Thermal Annealing on Raman Scattering of InN Epilayers

Published:2010-10-20 Issue:10 Volume:49 Page:105803
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Min-De,Tong Shih-Chang,Chou I-Tin,Shu Gia-Wei,Shen Ji-Lin,Lee Yueh-Chien,Huang Ying-Sheng,Chen Yang-Fang,Lin Tai-Yuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. Fermi-level stabilization energy in group III nitrides

2. Low-field electron mobility in wurtzite InN

3. Band Gap of Hexagonal InN and InGaN Alloys

4. Electroreflectance and photoluminescence study of InN

5. Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adjusted surface work function of InN films annealed at vacuum and at high-pressure N2 conditions;Materials Letters;2013-03

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