Non-Quasi-Static Modeling of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference7 articles.
1. Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications
2. A Review on Compact Modeling of Multiple-Gate MOSFETs
3. Spice Modeling of Silicon Nanowire Field-Effect Transistors for High-Speed Analog Integrated Circuits
4. Experimental Investigations on Nonlinear Properties of Superconducting Nanowire Meanderline in RF and Microwave Frequencies
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4. Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis;Japanese Journal of Applied Physics;2013-04-01
5. Extraction of T-Type Substrate Resistance Components for Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistors Based on Two-PortS-Parameter Measurement;Japanese Journal of Applied Physics;2012-11-01
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