KrF Excimer Laser Projection Lithography: 0.35µm Minimum Space VLSI Pattern Fabrication by a Tri-Level Resist Process-Reference-Cited by-同舟云学术

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KrF Excimer Laser Projection Lithography: 0.35µm Minimum Space VLSI Pattern Fabrication by a Tri-Level Resist Process

Published:1988-02-20 Issue:Part 1, No. 2 Volume:27 Page:323-327
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Takashi,Nakase Makoto,Nonaka Misako,Higashikawa Iwao,Horiike Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photolithography-Based Nanopatterning Using Re-entrant Photoresist Profile;ACS Applied Materials & Interfaces;2018-01-18

2. Improved pattern fabrication of naphthoquinonediazide-based deep ultraviolet resist by alkaline surface treatment;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-01

3. Application of Photobleachable Positive Resist and Contrast Enhancement Material to KrF Excimer Laser Lithography;Japanese Journal of Applied Physics;1989-11-20

4. Application of photoacid generating chemistry to photobleachable deep-ultraviolet resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11

5. Novel positive deep UV resist for KrF excimer laser lithography;Polymer Engineering and Science;1989-07

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