High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaNp–i–nVertical Conducting Diode onn-SiC Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. Performance evaluation of high-power wide band-gap semiconductor rectifiers
2. High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
3. Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
4. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers
5. Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
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